Interstitial solid solution Hf5GaxSn3 (x=0–1)

• Published in: Journal of alloys and compounds Vol. 512; no. 1; pp. 246 - 251
• Main Authors: Voznyak, I., Tokaychuk, Ya, Hlukhyy, V., Fässler, T.F., Gladyshevskii, R.
• Format: Journal Article
• Language: English
• Published: Kidlington Elsevier B.V 25.01.2012; Elsevier
• Subjects: Alloys; Condensed matter: structure, mechanical and thermal properties; Crystal structure; Derivatives; Diffraction; Exact sciences and technology; Gallium; Gallium base alloys; Hafnium; Interstices; Interstitials; Physics; Solid solution; Solid solutions; Structure of solids and liquids; crystallography; Structure of specific crystalline solids; Tin; X-ray diffraction; X-rays; Tin; X-ray diffraction; Gallium; Solid solution; Hafnium; Crystal structure; Space groups; Hafnium alloys; XRD; Gallium alloys; Lattice parameters; Coordination polyhedron; Interstitial solid solution; Tin alloys; Monocrystals; Frank Kasper phase; Chemical composition
• ISSN: 0925-8388; 1873-4669
• DOI: 10.1016/j.jallcom.2011.09.075

► Formation of an interstitial solid solution Hf5GaxSn3 (x=0–1) based on the binary compound Hf5Sn3 was established at 600°C. ► The Ga atoms occupy [Hf6] octahedral interstices (Wyckoff position 2b) up to the composition Hf5GaSn3, which represents a Hf5CuSn3-type structure (ordered derivative of Ti5Ga4). ► The cell parameters and cell volume increase with increasing gallium content. ► The coordination number of the hafnium atoms in Wyckoff position 6g is reduced from 15 (Hf1Sn5Hf10 for Hf5Sn3) to 11 (Hf1Sn5Ga2Hf4 for Hf5GaSn3). Formation of an interstitial solid solution Hf5GaxSn3 (x=0–1) based on the binary compound Hf5Sn3 (structure type Mn5Si3, Pearson symbol hP16, space group P63/mcm, a=8.36562(6), c=5.70775(4)Å from X-ray powder diffraction) was established at 600°C. The crystal structure (structure type Hf5CuSn3, ordered derivative of Ti5Ga4, hP18, P63/mcm) was refined on X-ray single-crystal diffraction data for three compositions: Hf5Ga0.16(3)Sn3 (a=8.3288(12), c=5.6988(11)Å), Hf5Ga0.53(2)Sn3 (a=8.4205(12), c=5.7655(12)Å) and Hf5GaSn3 (a=8.5564(12), c=5.7859(12)Å). The Ga atoms occupy Wyckoff position 2b at the centres of Hf6 octahedral interstices.