A novel gate geometry for the IGBT: the trench planar insulated gate bipolar transistor (TPIGBT)

This letter demonstrates a simple way to improve the performance of a planar, fine lithography insulated gate bipolar transistor (IGBT), by incorporating a trench gate between the cathode cells. The results of this new trench-planar IGBT (TPIGBT) clearly demonstrate a significant reduction in the vo...

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Bibliographic Details
Published inIEEE electron device letters Vol. 20; no. 11; pp. 580 - 582
Main Authors Spulber, O., Narayanan, E.M.S., Hardikar, S., De Souza, M.M., Sweet, M., Bose J.V., S.C.
Format Journal Article
LanguageEnglish
Published IEEE 01.11.1999
Subjects
Bipolar transistors
Breakdown voltage
Cathodes
Costs
Degradation
Displays
Doping
Electric potential
Gates
Geometry
Insulated gate bipolar transistors
Lithography
Tradeoffs
Trenches
Voltage
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Summary:This letter demonstrates a simple way to improve the performance of a planar, fine lithography insulated gate bipolar transistor (IGBT), by incorporating a trench gate between the cathode cells. The results of this new trench-planar IGBT (TPIGBT) clearly demonstrate a significant reduction in the voltage drop without degrading the breakdown voltage. The switching analysis indicates that the TPIGBT represents a good trade-off between planar and trench structures. By separating the trench gate requirements away from the cathode cells, the technology development cycle and costs can be reduced. Furthermore, the reduced cell-width and the shallow trench presents TPIGBT as a cost-effective structure for high-voltage applications.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0741-3106
1558-0563
DOI:10.1109/55.798050