Back electrode formation for poly-Si thin film solar cells on glass having AIC-grown seeding layer

Various conductive materials (Al, Mo and TiN) were deposited onto glass substrates to evaluate whether poly-Si seed layers can be formed on such substrates by means of Al-induced crystallisation (AIC) of a-Si at low temperature around 450°C. The material located between the glass and the poly-Si fil...

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Published inSolar energy materials and solar cells Vol. 74; no. 1; pp. 305 - 314
Main Authors Widenborg, Per, Neuhaus, Dirk-Holger, Campbell, Patrick, Sproul, Alistair B., Aberle, Armin G.
Format Journal Article
LanguageEnglish
Published Elsevier B.V 01.10.2002
Subjects
AIC
Back electrode
Chemical vapor deposition
Crystallization
Electric conductivity of solids
Electrodes
Infrared radiation
Light reflection
Molybdenum
Poly-Si
Polysilicon
Solar cell
Thin film
Thin films
Titanium nitride
Solar cell
Poly-Si
Back electrode
AIC
Thin film
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Summary:Various conductive materials (Al, Mo and TiN) were deposited onto glass substrates to evaluate whether poly-Si seed layers can be formed on such substrates by means of Al-induced crystallisation (AIC) of a-Si at low temperature around 450°C. The material located between the glass and the poly-Si film serves as the back electrode of a substrate-type thin-film solar cell configuration. The outcome of the investigation is that Mo is found to be not compatible with the AIC process. In contrast, Al and TiN showed moderate to good compatibility. TiN is the only viable choice for high-temperature applications (>540°C). Al has satisfactory back electrode properties whereas TiN has a medium high resistivity (120 μΩ cm) and an estimated low back reflectance at the near-infrared wavelengths critical for light trapping.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0927-0248
1879-3398
DOI:10.1016/S0927-0248(02)00089-2