Thermal Analysis of Ultimately-Thinned-and-Transfer-Bonded CMOS on Mechanically Flexible Foils

Thinned CMOS chips transfer-bonded onto a compliant host substrate remain to date the technology of choice for applications requiring both mechanical flexibility and high frequency operation. However, the use of poorly thermally conductive host substrates raises the problem of thermal management of...

Full description

Saved in:
Bibliographic Details
Published inIEEE journal of the Electron Devices Society Vol. 7; pp. 973 - 978
Main Authors Philippe, Justine, Bhaskar, Arun, Okada, Etienne, Braud, Flavie, Robillard, Jean-Francois, Danneville, Francois, Raynaud, Christine, Gloria, Daniel, Dubois, Emmanuel
Format Journal Article
LanguageEnglish
Published New York IEEE 01.01.2019
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
IEEE Electron Devices Society
Subjects
Bonding
CMOS
Copper
Engineering Sciences
Flexibility
Flexible components
flexible electronics
Foils
Infrared imaging
Micro and nanotechnologies
Microelectronics
Product design
Silicon
Silicon substrates
SOI
Substrates
Thermal analysis
Thermal conductivity
Thermal management
Thermography
thin film
Transistors
flexible electronics
CMOS
thin film
SOI
thermal management
Online AccessGet full text

Cover

More Information
Summary:Thinned CMOS chips transfer-bonded onto a compliant host substrate remain to date the technology of choice for applications requiring both mechanical flexibility and high frequency operation. However, the use of poorly thermally conductive host substrates raises the problem of thermal management of flexible electronics, a topic poorly addressed in literature. In this letter, we report the analysis of flexible SOI-CMOS chips ultimately-thinned-and-transfer-bonded (UTTB) onto polyimide and copper substrates. While the temperature remains limited to ~68°C on the native silicon substrate or after transfer onto a copper host substrate, infrared thermography reveals temperature peaks of up to 118°C on polyimide. The impact of self-heating in flexible SOI-CMOS is correlated with electrical performance for the three types of substrates. Beyond the property of mechanical flexibility it provides, a copper substrate is shown to slightly strengthen electrostatic integrity while maintaining a thermal landscape close to that of silicon.
ISSN:2168-6734
2168-6734
DOI:10.1109/JEDS.2019.2939884