Stacking fault-mediated ultrastrong nanocrystalline Ti thin films

In this work, we prepared nanocrystalline (NC) Ti thin films with abundant stacking faults (SFs), which were created via partial dislocations emitted from grain boundaries and which were insensitive to grain sizes. By employing the nanoindentation test, we investigated the effects of SFs and grain s...

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Bibliographic Details
Published inNanotechnology Vol. 28; no. 44; p. 445706
Main Authors Wu, K, Zhang, J Y, Li, G, Wang, Y Q, Cui, J C, Liu, G, Sun, J
Format Journal Article
LanguageEnglish
Published England IOP Publishing 03.11.2017
Subjects
Hall-Petch relation
nanostructured Ti thin films
size effects
stacking faults
strengthening mechanism
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Summary:In this work, we prepared nanocrystalline (NC) Ti thin films with abundant stacking faults (SFs), which were created via partial dislocations emitted from grain boundaries and which were insensitive to grain sizes. By employing the nanoindentation test, we investigated the effects of SFs and grain sizes on the strength of NC Ti films at room temperature. The high density of SFs significantly strengthens NC Ti films, via dislocation-SF interactions associated with the reported highest Hall-Petch slope of ∼20 GPa nm1/2, to an ultrahigh strength of ∼4.4 GPa, approaching ∼50% of its ideal strength.
Bibliography:NANO-114194.R2
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ISSN:0957-4484
1361-6528
DOI:10.1088/1361-6528/aa887f