Interface Coupled Photodetector (ICPD) With High Photoresponsivity Based on Silicon-on-Insulator Substrate (SOI)

• Published in: IEEE journal of the Electron Devices Society Vol. 6; pp. 557 - 564
• Main Authors: Deng, Jianan, Shao, Jinhai, Lu, Bingrui, Chen, Yifang, Zaslavsky, Alexander, Cristoloveanu, Sorin, Bawedin, Maryline, Wan, Jing
• Format: Journal Article
• Language: English
• Published: New York IEEE 01.01.2018; The Institute of Electrical and Electronics Engineers, Inc. (IEEE); IEEE Electron Devices Society
• Subjects: CMOS; Coupling; Engineering Sciences; high photoresponsivity; imaging sensor arrays; Interface coupling effect; Logic gates; Micro and nanotechnologies; Microelectronics; MOSFET; MOSFETs; Performance evaluation; Photodetectors; Photometers; Silicon; Silicon films; Silicon substrates; Silicon-on-insulator; SOI (semiconductors); SOI/GeOI based photodetector; Substrates; SOI/GeOI based photodetector; imaging sensor arrays; Interface coupling effect; high photoresponsivity

A CMOS-compatible photodetector with high responsivity is reported. This device utilizes the unique interface coupling effect found in fully depleted silicon on insulator (SOI) MOSFETs. Unlike conventional SOI photodetectors, the proposed device shows higher photoresponsivity in thinner Si films due...