Interface Coupled Photodetector (ICPD) With High Photoresponsivity Based on Silicon-on-Insulator Substrate (SOI)
A CMOS-compatible photodetector with high responsivity is reported. This device utilizes the unique interface coupling effect found in fully depleted silicon on insulator (SOI) MOSFETs. Unlike conventional SOI photodetectors, the proposed device shows higher photoresponsivity in thinner Si films due...
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Published in | IEEE journal of the Electron Devices Society Vol. 6; pp. 557 - 564 |
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Main Authors | , , , , , , , |
Format | Journal Article |
Language | English |
Published |
New York
IEEE
01.01.2018
The Institute of Electrical and Electronics Engineers, Inc. (IEEE) IEEE Electron Devices Society |
Subjects | |
Online Access | Get full text |
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Summary: | A CMOS-compatible photodetector with high responsivity is reported. This device utilizes the unique interface coupling effect found in fully depleted silicon on insulator (SOI) MOSFETs. Unlike conventional SOI photodetectors, the proposed device shows higher photoresponsivity in thinner Si films due to stronger interface coupling, as confirmed by TCAD simulations. A prototype device fabricated with a simplified process flow achieves a record photoresponsivity up to 3.3 x 104 A/W. |
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ISSN: | 2168-6734 2168-6734 |
DOI: | 10.1109/JEDS.2017.2788403 |