Interface Coupled Photodetector (ICPD) With High Photoresponsivity Based on Silicon-on-Insulator Substrate (SOI)

A CMOS-compatible photodetector with high responsivity is reported. This device utilizes the unique interface coupling effect found in fully depleted silicon on insulator (SOI) MOSFETs. Unlike conventional SOI photodetectors, the proposed device shows higher photoresponsivity in thinner Si films due...

Full description

Saved in:
Bibliographic Details
Published inIEEE journal of the Electron Devices Society Vol. 6; pp. 557 - 564
Main Authors Deng, Jianan, Shao, Jinhai, Lu, Bingrui, Chen, Yifang, Zaslavsky, Alexander, Cristoloveanu, Sorin, Bawedin, Maryline, Wan, Jing
Format Journal Article
LanguageEnglish
Published New York IEEE 01.01.2018
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
IEEE Electron Devices Society
Subjects
CMOS
Coupling
Engineering Sciences
high photoresponsivity
imaging sensor arrays
Interface coupling effect
Logic gates
Micro and nanotechnologies
Microelectronics
MOSFET
MOSFETs
Performance evaluation
Photodetectors
Photometers
Silicon
Silicon films
Silicon substrates
Silicon-on-insulator
SOI (semiconductors)
SOI/GeOI based photodetector
Substrates
SOI/GeOI based photodetector
imaging sensor arrays
Interface coupling effect
high photoresponsivity
Online AccessGet full text

Cover

More Information
Summary:A CMOS-compatible photodetector with high responsivity is reported. This device utilizes the unique interface coupling effect found in fully depleted silicon on insulator (SOI) MOSFETs. Unlike conventional SOI photodetectors, the proposed device shows higher photoresponsivity in thinner Si films due to stronger interface coupling, as confirmed by TCAD simulations. A prototype device fabricated with a simplified process flow achieves a record photoresponsivity up to 3.3 x 104 A/W.
ISSN:2168-6734
2168-6734
DOI:10.1109/JEDS.2017.2788403