Bias dependent microwave performance of AlGaN/GaN MODFET's up to 100 V

1 μm gate-length AlGaN/GaN modulation doped field effect transistors (MODFET's) have been fabricated on an insulating GaN buffer layer for better carrier confinement. These devices demonstrate simultaneously high current levels (>500 mA/mm), excellent pinch-off and high gate-drain breakdown...

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Bibliographic Details
Published inIEEE electron device letters Vol. 18; no. 6; pp. 290 - 292
Main Authors Wu, Y.-F., Keller, S., Kozodoy, P., Keller, B.P., Parikh, P., Kapolnek, D., Denbaars, S.P., Mishra, U.K.
Format Journal Article
LanguageEnglish
Published IEEE 01.06.1997
Subjects
Aluminum gallium nitride
Buffer layers
Cutoff frequency
Epitaxial layers
FETs
Gallium nitride
HEMTs
Insulation
Microwave devices
MODFETs
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Summary:1 μm gate-length AlGaN/GaN modulation doped field effect transistors (MODFET's) have been fabricated on an insulating GaN buffer layer for better carrier confinement. These devices demonstrate simultaneously high current levels (>500 mA/mm), excellent pinch-off and high gate-drain breakdown voltages (220 V for 3 μm gate-drain spacing). In contrast to their GaAs counterparts, the current-gain cutoff frequency of the AlGaN/GaN devices shows little degradation at high drain voltage biases. A power-gain cutoff frequency of 19 GHz is obtained at 100 V. ACW power density of 1.57 W/mm at 4 Ghz is also achieved when biased at 28 V and 205 mA/mm.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0741-3106
1558-0563
DOI:10.1109/55.585362