Deposition of thick boron-doped homoepitaxial single crystal diamond by microwave plasma chemical vapor deposition

• Published in: Diamond and related materials Vol. 18; no. 5; pp. 704 - 706
• Main Authors: Ramamurti, R., Becker, M., Schuelke, T., Grotjohn, T.A., Reinhard, D.K., Asmussen, J.
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Amsterdam Elsevier B.V 01.05.2009; Elsevier
• Subjects: Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.); Cross-disciplinary physics: materials science; rheology; Diamond growth; Exact sciences and technology; Fullerenes and related materials; diamonds, graphite; Ion and electron beam-assisted deposition; ion plating; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; P-type doping; Physics; Physics of gases, plasmas and electric discharges; Physics of plasmas and electric discharges; Plasma applications; Plasma-assisted CVD; Plasma-based ion implantation and deposition; Single crystal diamond; Specific materials; P-type doping; Diamond growth; Single crystal diamond; Plasma-assisted CVD; Electrical conductivity; High density; Synthetic diamond; Doped materials; Infrared spectra; Experimental study; Crystal perfection; CVD; Boron; Monocrystals; p type semiconductor; Boron additions; PECVD; Absorption spectra; Microwave discharge; Plasma deposition
• ISSN: 0925-9635; 1879-0062
• DOI: 10.1016/j.diamond.2009.01.031

The deposition of high quality single crystal boron-doped diamond is studied. The experimental conditions for the synthesis of 1–2 mm thick boron-doped diamond are investigated using a high power density microwave plasma-assisted chemical vapor deposition reactor. The boron-doped diamond is deposited at a rate of 8–11.5 μm/h using 1 ppm diborane in the feed gas as the boron source, and the capability to overgrow defects is demonstrated. The experimental study also investigates the deposition of diamond with both 10 ppm diborane and 2.5–500 ppm of nitrogen added to the feedgas. Synthesized material properties are measured including the electrical conductivity using a four-point probe and the substitutional boron content using infrared absorption.