High-detectivity tin disulfide nanowire photodetectors with manipulation of localized ferroelectric polarization field

• Published in: Nanophotonics (Berlin, Germany) Vol. 10; no. 18; pp. 4637 - 4644
• Main Authors: Zheng, Dingshan, Wang, Hailu, Chen, Ruoling, Li, Long, Guo, Jiaxiang, Gu, Yue, Zubair, Muhammad M., Yu, Xiangxiang, Jiang, Long, Zhu, Desheng, Xiong, Yan, Zhang, Han, Yang, Wen-Xing, Miao, Jinshui
• Format: Journal Article
• Language: English
• Published: Berlin De Gruyter 03.12.2021; Walter de Gruyter GmbH
• Subjects: Dark current; Depletion; Electric fields; Electrical properties; ferroelectric; Ferroelectric materials; Ferroelectricity; Laboratories; nanowire; Nanowires; Noise; Optical properties; Optoelectronics; photodetector; Photometers; Physics; Polarization; Polymers; Quantum dots; Semiconductors; SnS; sns2; Spectral sensitivity; Spectrum analysis; Tin disulfide
• ISSN: 2192-8614; 2192-8606; 2192-8614
• DOI: 10.1515/nanoph-2021-0480

Tin sulfide semiconductor nanowires (NWs) have been widely investigated for photodetection applications because of their good optical and electrical properties. Herein, we synthesized n-type SnS NWs and then fabricated SnS NW photodetectors with a ferroelectric polymer side-gate. The strong electric field induced by ferroelectric polymer can effectively suppress the dark current and improve the detectivity in SnS NW photodetectors. The photodetectors after polarization depletion exhibit a high photoconductive gain of 4.0 × 10 and a high responsivity of 2.1 × 10  A W . Compared with devices without polarization depletion, the detectivity of polarization-depleted photodetectors is improved by at least two orders of magnitude, and the highest detectivity is 1.3 × 10 Jones. Further, the rise and fall time are 56 and 91 ms respectively, which are about tens of times faster than those without polarization depletion. The device also shows a good spectral response from ultraviolet to near-infrared. This study demonstrates that ferroelectric materials can enhance optoelectronic properties of low-dimensional semiconductors for high-performance photodetectors.