Optically efficient InAsSb nanowires for silicon-based mid-wavelength infrared optoelectronics

• Published in: Nanotechnology Vol. 28; no. 10; p. 105710
• Main Authors: Zhuang, Q D, Alradhi, H, Jin, Z M, Chen, X R, Shao, J, Chen, X, Sanchez, Ana M, Cao, Y C, Liu, J Y, Yates, P, Durose, K, Jin, C J
• Format: Journal Article
• Language: English
• Published: England IOP Publishing 10.03.2017
• Subjects: InAsSb; infrared; molecular beam epitaxy; nanowire; photoluminescence
• ISSN: 0957-4484; 1361-6528
• DOI: 10.1088/1361-6528/aa59c5

InAsSb nanowires (NWs) with a high Sb content have potential in the fabrication of advanced silicon-based optoelectronics such as infrared photondetectors/emitters and highly sensitive phototransistors, as well as in the generation of renewable electricity. However, producing optically efficient InAsSb NWs with a high Sb content remains a challenge, and optical emission is limited to 4.0 m due to the quality of the nanowires. Here, we report, for the first time, the success of high-quality and optically efficient InAsSb NWs enabling silicon-based optoelectronics operating in entirely mid-wavelength infrared. Pure zinc-blende InAsSb NWs were realized with efficient photoluminescence emission. We obtained room-temperature photoluminescence emission in InAs NWs and successfully extended the emission wavelength in InAsSb NWs to 5.1 m. The realization of this optically efficient InAsSb NW material paves the way to realizing next-generation devices, combining advances in III-V semiconductors and silicon.