High-efficiency SOI-based metalenses at telecommunication wavelengths

We demonstrated silicon-on-insulator (SOI)-based high-efficiency metalenses at telecommunication wavelengths that are integrable with a standard 220 nm-thick silicon photonic chip. A negative electron-beam resist (ma-N) was placed on top of the Si nanodisk, providing vertical symmetry to realize hig...

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Bibliographic Details
Published inNanophotonics (Berlin, Germany) Vol. 11; no. 21; pp. 4697 - 4704
Main Authors Ryu, Taesu, Kim, Moohyuk, Hwang, Yongsop, Kim, Myung-Ki, Yang, Jin-Kyu
Format Journal Article
LanguageEnglish
Published Berlin De Gruyter 01.12.2022
Walter de Gruyter GmbH
Subjects
Depth of field
Design
Efficiency
Electron beams
Integrated circuits
Light
metalens
metasurface
Optics
Photonics
Silicon
silicon photonics
SOI (semiconductors)
Symmetry
Wavelengths
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Summary:We demonstrated silicon-on-insulator (SOI)-based high-efficiency metalenses at telecommunication wavelengths that are integrable with a standard 220 nm-thick silicon photonic chip. A negative electron-beam resist (ma-N) was placed on top of the Si nanodisk, providing vertical symmetry to realize high efficiency. A metasurface with a Si/ma-N disk array was numerically investigated to design a metalens that showed that a Si/ma-N metalens could focus the incident beam six times stronger than a Si metalens without ma-N. Metalenses with a thick ma-N layer have been experimentally demonstrated to focus the beam strongly at the focal point and have a long depth of field at telecommunication wavelengths. A short focal length of 10 μm with a wavelength-scale spot diameter of approximately 2.5 μm was realized at 1530 nm. This miniaturized high-efficiency metalens with a short focal length can provide a platform for ultrasensitive sensors on silicon photonic IC.
ISSN:2192-8614
2192-8606
2192-8614
DOI:10.1515/nanoph-2022-0480