High-k polymeric gate insulators for organic field-effect transistors

• Published in: Nanotechnology Vol. 30; no. 20; pp. 202002 - 202016
• Main Authors: Yu, Haiyang, Chen, Yihang, Wei, Huanhuan, Gong, Jiangdong, Xu, Wentao
• Format: Journal Article
• Language: English
• Published: England IOP Publishing 17.05.2019
• Subjects: gate insulators; high dielectric constant (high; organic field-effect transistors (OFETs); polymer dielectrics; thin film transistors
• ISSN: 0957-4484; 1361-6528; 1361-6528
• DOI: 10.1088/1361-6528/ab00a4

Gate insulators play a role as important as that of the semiconductor in high performance OFETs, with a high on/off current ratio, low hysteresis, and device stability. The essential requirements for gate dielectrics include high capacitance, high dielectric breakdown strength, solution-processibility, and flexibility. In this paper we review progress in recent years in developing high-k gate polymeric insulators for modern organic electronic applications. After a general introduction to OFETs, three types of high-k polymeric gate insulating materials are enumerated in achieving high-quality OFETs, including polymer gate insulators, polymer-inorganic gate composites or bilayers, and ion gel electrolytes. Especially, we emphasize the significance, implementation and development of high-k polymeric gate insulators used in OFETs for future low voltage operated and flexible electronics. Finally, a brief summary and outlook are presented.