Mechanism of Defect Formation Process in Electron-Irradiated Pb1-xSnxSe Alloys with Inverse Band Structure

• Published in: physica status solidi (b) Vol. 210; no. 2; pp. 797 - 800
• Main Authors: Skipetrov, E.P., Zvereva, E.A., Kovalev, B.B., Mousalitin, A.M., Skipetrova, L.A.
• Format: Journal Article
• Language: English
• Published: Berlin WILEY-VCH Verlag 01.12.1998; WILEY‐VCH Verlag
• ISSN: 0370-1972; 1521-3951
• DOI: 10.1002/(SICI)1521-3951(199812)210:2<797::AID-PSSB797>3.0.CO;2-M

The kinetics of the electron concentration variation in n‐Pb1—xSnxSe (x = 0.20, 0.25) alloys irradiated with electrons was investigated. By comparing theoretical and experimental dependences of the electron concentration on the radiation flux the main parameters of the defect formation process were determined assuming that the radiation defect introduction rate decreases exponentially with an increase in radiation flux. A model was proposed according to which the major mechanism of defect formation process is the generation of complexes including the primary radiation defects and the intrinsic structure defects typical of initial crystals.