Characterization of InGaN Single Layers and Quantum Wells Grown by LP-MOVPE

• Published in: physica status solidi (b) Vol. 216; no. 1; pp. 311 - 314
• Main Authors: Schineller, B., Lim, P.H., Schön, O., Protzmann, H., Heuken, M., Heime, K.
• Format: Journal Article
• Language: English
• Published: Berlin WILEY-VCH Verlag 01.11.1999; WILEY‐VCH Verlag

We investigated the optical and structural properties of InGaN single layers, double heterostructures (DH) and single quantum wells (SQW) grown by MOVPE using low‐temperature photoluminescence (PL) and five crystal X‐ray diffraction spectrometry (XRD). The In content was found to increase with decre...