Characterization of InGaN Single Layers and Quantum Wells Grown by LP-MOVPE

We investigated the optical and structural properties of InGaN single layers, double heterostructures (DH) and single quantum wells (SQW) grown by MOVPE using low‐temperature photoluminescence (PL) and five crystal X‐ray diffraction spectrometry (XRD). The In content was found to increase with decre...

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Published inphysica status solidi (b) Vol. 216; no. 1; pp. 311 - 314
Main Authors Schineller, B., Lim, P.H., Schön, O., Protzmann, H., Heuken, M., Heime, K.
Format Journal Article
LanguageEnglish
Published Berlin WILEY-VCH Verlag 01.11.1999
WILEY‐VCH Verlag
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Summary:We investigated the optical and structural properties of InGaN single layers, double heterostructures (DH) and single quantum wells (SQW) grown by MOVPE using low‐temperature photoluminescence (PL) and five crystal X‐ray diffraction spectrometry (XRD). The In content was found to increase with decreasing growth temperature and increasing reactor total pressure. High resolution XRD spectra exhibited no indication for phase separation or composition pulling frequently observed in thick layers. The InGaN emissions recorded from our samples exhibited energetic positions between calculated values for bowing factors of 1 eV and 3.2 eV.
Bibliography:ark:/67375/WNG-RMCNPQJZ-M
ArticleID:PSSB311
istex:2CF86311291ABB727965834B2E8F504DB685443D
ISSN:0370-1972
1521-3951
DOI:10.1002/(SICI)1521-3951(199911)216:1<311::AID-PSSB311>3.0.CO;2-F