Characterization of InGaN Single Layers and Quantum Wells Grown by LP-MOVPE
We investigated the optical and structural properties of InGaN single layers, double heterostructures (DH) and single quantum wells (SQW) grown by MOVPE using low‐temperature photoluminescence (PL) and five crystal X‐ray diffraction spectrometry (XRD). The In content was found to increase with decre...
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Published in | physica status solidi (b) Vol. 216; no. 1; pp. 311 - 314 |
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Main Authors | , , , , , |
Format | Journal Article |
Language | English |
Published |
Berlin
WILEY-VCH Verlag
01.11.1999
WILEY‐VCH Verlag |
Online Access | Get full text |
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Summary: | We investigated the optical and structural properties of InGaN single layers, double heterostructures (DH) and single quantum wells (SQW) grown by MOVPE using low‐temperature photoluminescence (PL) and five crystal X‐ray diffraction spectrometry (XRD). The In content was found to increase with decreasing growth temperature and increasing reactor total pressure. High resolution XRD spectra exhibited no indication for phase separation or composition pulling frequently observed in thick layers. The InGaN emissions recorded from our samples exhibited energetic positions between calculated values for bowing factors of 1 eV and 3.2 eV. |
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Bibliography: | ark:/67375/WNG-RMCNPQJZ-M ArticleID:PSSB311 istex:2CF86311291ABB727965834B2E8F504DB685443D |
ISSN: | 0370-1972 1521-3951 |
DOI: | 10.1002/(SICI)1521-3951(199911)216:1<311::AID-PSSB311>3.0.CO;2-F |