Thermal Stability of Silicon Carbide Power Diodes

• Published in: IEEE transactions on electron devices Vol. 59; no. 3; pp. 761 - 769
• Main Authors: Buttay, C., Raynaud, C., Morel, H., Civrac, G., Locatelli, M-L, Morel, F.
• Format: Journal Article
• Language: English
• Published: New York, NY IEEE 01.03.2012; Institute of Electrical and Electronics Engineers
• Subjects: Applied sciences; Cooling; Diodes; Electric power; Electrical engineering. Electrical power engineering; Electronic equipment and fabrication. Passive components, printed wiring boards, connectics; Electronics; Engineering Sciences; Exact sciences and technology; High-temperature techniques; Junctions; Other multijunction devices. Power transistors. Thyristors; P-i-n diodes; power electronics; Power electronics, power supplies; Schottky diodes; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Silicon carbide; silicon carbide (SiC); Temperature measurement; Thermal stability; p-i-n diodes; Schottky diodes; Parameter estimation; Burnout; High-temperature techniques; Thermal management (packaging); Thermal behavior; Power electronics; Thermal stability; silicon carbide (SiC); Silicon carbide; Cooling system; Thermal runaway; Power device; Silicon diodes; Power diode; Silicon; System identification; Schottky barrier diode; p i n diode; High temperature techniques; P-i-n diodes
• ISSN: 0018-9383; 1557-9646
• DOI: 10.1109/TED.2011.2181390

Silicon carbide (SiC) power devices can operate at much higher junction temperature than those made of silicon. However, this does not mean that SiC devices can operate without a good cooling system. To demonstrate this, the model of a merged p-i-n Schottky (MPS) SiC diode is presented, and its parameters are identified with experimental measurements. This model is then used to study the ruggedness of the diode regarding the thermal runaway phenomenon. Finally, it is shown that, where a purely unipolar diode would be unstable, the MPS structure brings increased stability.