High flowability monomer resists for thermal nanoimprint lithography

• Published in: Microelectronic engineering Vol. 86; no. 4; pp. 779 - 782
• Main Authors: Perez Toralla, K., De Girolamo, J., Truffier-Boutry, D., Gourgon, C., Zelsmann, M.
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Amsterdam Elsevier B.V 01.04.2009; Elsevier
• Subjects: Applied sciences; Chemical Sciences; Electronics; Engineering Sciences; Exact sciences and technology; Flow properties; Micro and nanotechnologies; Microelectronic fabrication (materials and surfaces technology); Microelectronics; Monomer resists; Nanoimprint lithography; Polyhedral silsesquioxane; Polymers; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Flow properties; Nanoimprint lithography; Polyhedral silsesquioxane; Monomer resists; Mean free path; Polymer; Shrinkage; Nanolithography; Zone plate; Fresnel zone; Microelectronic fabrication; Resist; Wafer
• ISSN: 0167-9317; 1873-5568
• DOI: 10.1016/j.mee.2009.01.014

In this paper, we have been using polymer and thermally curable monomer resists in a full 8 in. wafer thermal nanoimprint lithography process. Using exactly the same imprinting conditions, we observed that a monomer solution provides a much larger resist redistribution than a polymer resist. Imprinting Fresnel zone plates, composed of micro- and nano-meter features, was possible only with the monomer resist. In order to reduce the shrinkage ratio of the monomer resists, acrylate–silsesquioxane materials were synthesised. With a simple diffusion-like model, we could extract a mean free path of 1.1 mm for the monomer resist, while a polymer flows only on distances below 10 μm in the same conditions.