Laser induced forward transfer of metal oxides using femtosecond double pulses

Laser induced forward transfer (LIFT) of ZnO and TiO2 thin films onto Si has been realized with femtosecond double pulses of equal intensity, as a basic form of pulse shaping. In an effort to investigate the possibility to control the spatial distribution of the transfer via pulse separation, we use...

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Bibliographic Details
Published inApplied surface science Vol. 257; no. 2; pp. 508 - 511
Main Authors Papadopoulou, E.L., Axente, E., Magoulakis, E., Fotakis, C., Loukakos, P.A.
Format Journal Article
LanguageEnglish
Published Amsterdam Elsevier B.V 01.11.2010
Elsevier
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Summary:Laser induced forward transfer (LIFT) of ZnO and TiO2 thin films onto Si has been realized with femtosecond double pulses of equal intensity, as a basic form of pulse shaping. In an effort to investigate the possibility to control the spatial distribution of the transfer via pulse separation, we used separation times varying from 0 to 10ps. We have found that the size of the transferred spots increases by as much as 50% for pulse separation up to 500fs, while for longer pulse separations the transferred spots acquire a constant area.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0169-4332
1873-5584
DOI:10.1016/j.apsusc.2010.07.022