Efficient white organic light emission by single emitting layer

• Published in: Thin solid films Vol. 426; no. 1; pp. 246 - 249
• Main Authors: Ko, Young Wook, Chung, Choong-Heui, Lee, Jin Ho, Kim, Yong-Hae, Sohn, Choong-Yong, Kim, Bong-Chul, Hwang, Chi-Sun, Song, Yoon-Ho, Lim, Jongtae, Ahn, Young-Joo, Kang, Gi-Wook, Lee, Namheon, Lee, Changhee
• Format: Journal Article
• Language: English
• Published: Lausanne Elsevier B.V 24.02.2003; Elsevier Science
• Subjects: Applied sciences; Electroluminescence; Electronics; Exact sciences and technology; Optoelectronic devices; Organic semiconductor; Physical vapor deposition; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; White OLED; Physical vapor deposition; White OLED; Electroluminescence; Organic semiconductor; Performance evaluation; White light; Doping; Pyran derivatives; Aluminium complex; Quantum yield; Light emitting diode; Microelectronic fabrication; Luminance; Optoelectronic device; Chromaticity; Organic compounds
• ISSN: 0040-6090; 1879-2731
• DOI: 10.1016/S0040-6090(03)00007-5

Stable organic white light-emitting diodes are successfully fabricated by a single organic white emitting layer, which is Bis (2-methyl-8-quinolinato) (triphenylsiloxy) aluminum (III) (SAlq) doped red fluorescent dye of 4-(dicyanomethylene)-2- tert-butyl-6(1,1,7,7-tetramethyljulolidyl-9-enyl)-4 H-pyran (DCJTB). The incomplete energy transfer from blue-emitting SAlq to red-emitting DCJTB enables to obtain a stable white balanced light-emission by the DCJTB doping concentration of 0.5%. A device with the structure of ITO/TPD (50 nm)/SAlq:DCJTB (30 nm, 0.5%)/Alq 3 (20 nm)/LiF (0.5 nm)/Al (110 nm) shows maximum luminance of 20 400 cd/m 2 at 810 mA/cm 2, external quantum efficiency of 2% at 200 cd/m 2 (∼3 mA/cm 2), power efficiency of 2.3 lm/W at 67 cd/m 2 (∼1 mA/cm 2), and a Commission Internationale de l'Eclairage chromaticity coordinates of (0.34, 0.39) at 1.8 mA/cm 2 to (0.31, 0.38) at 36 mA/cm 2.