Study of Fe/Si multilayers by photoemission spectroscopy

• Published in: Journal of alloys and compounds Vol. 362; no. 1; pp. 202 - 205
• Main Authors: Orlowski, B.A., Kowalski, B.J., Fronc, K., Zuberek, R., Mickevičius, S., Mirabella, F., Ghijsen, J.
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Lausanne Elsevier B.V 14.01.2004; Elsevier
• Subjects: Condensed matter: structure, mechanical and thermal properties; Diffusion; interface formation; Exact sciences and technology; Fe–Si interface; Iron; Physics; Silicides; Silicon oxides; Solid surfaces and solid-solid interfaces; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); X-Ray photoelectron spectroscopy; Fe–Si interface; Iron; X-Ray photoelectron spectroscopy; Silicides; Silicon oxides; Annealing; Solid-solid interfaces; Experimental study; Core levels; Fe-Si interface; Thin films; Multilayers; Cathode sputtering; Transition elements; Silicon; Iron silicides; X-ray photoelectron spectra
• ISSN: 0925-8388; 1873-4669
• DOI: 10.1016/S0925-8388(03)00584-X

The Fe/Si multilayers structure was grown by direct current magnetron sputtering technique and was studied by means of X-ray photoelectron spectroscopy. The iron silicide formation at the oxidized Fe/Si interface is inhibited at room and elevated temperatures and it occurs at T≥500 °C. The prolonged annealing of the Fe/Si interface to 500 °C leads to the steady growth of the Si 3+ and Si 4+ oxygen-related components in the sample.