Self-pulsation dynamics in narrow stripe semiconductor lasers

In this paper, we address the physical origin of self-pulsation in narrow stripe edge emitting semiconductor lasers. We present both experimental time-averaged polarization-resolved near-field measurements performed with a charged-coupled device camera and picosecond time resolved near-field measure...

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Published inIEEE journal of quantum electronics Vol. 42; no. 3-4; pp. 381 - 388
Main Authors LANDAIS, Pascal, LYNCH, Stephen A, O'GORMAN, James, FISCHER, Ingo, ELSÄSSER, Wolfgang
Format Journal Article
LanguageEnglish
Published New York, NY Institute of Electrical and Electronics Engineers 01.04.2006
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
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Summary:In this paper, we address the physical origin of self-pulsation in narrow stripe edge emitting semiconductor lasers. We present both experimental time-averaged polarization-resolved near-field measurements performed with a charged-coupled device camera and picosecond time resolved near-field measurements performed with a streak camera. These results demonstrate dynamic spatial-hole burning during pulse formation and evolution. We conclude from these experimental results that the dominant process which drives the self-pulsation in this type of laser diode is carrier induced effective refractive index change induced by the spatial-hole burning.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0018-9197
1558-1713
DOI:10.1109/JQE.2006.872309