Self-pulsation dynamics in narrow stripe semiconductor lasers
In this paper, we address the physical origin of self-pulsation in narrow stripe edge emitting semiconductor lasers. We present both experimental time-averaged polarization-resolved near-field measurements performed with a charged-coupled device camera and picosecond time resolved near-field measure...
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Published in | IEEE journal of quantum electronics Vol. 42; no. 3-4; pp. 381 - 388 |
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Main Authors | , , , , |
Format | Journal Article |
Language | English |
Published |
New York, NY
Institute of Electrical and Electronics Engineers
01.04.2006
The Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Subjects | |
Online Access | Get full text |
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Summary: | In this paper, we address the physical origin of self-pulsation in narrow stripe edge emitting semiconductor lasers. We present both experimental time-averaged polarization-resolved near-field measurements performed with a charged-coupled device camera and picosecond time resolved near-field measurements performed with a streak camera. These results demonstrate dynamic spatial-hole burning during pulse formation and evolution. We conclude from these experimental results that the dominant process which drives the self-pulsation in this type of laser diode is carrier induced effective refractive index change induced by the spatial-hole burning. |
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Bibliography: | ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23 |
ISSN: | 0018-9197 1558-1713 |
DOI: | 10.1109/JQE.2006.872309 |