Screen-Printed Cu Source/Drain Electrodes for a-InGaZnO Thin-Film Transistors

We report screen-printed copper source/drain electrodes for a-InGaZnO (a-IGZO) thin-film transistors (TFTs). The best electrical characteristics of the a-IGZO TFTs were a field-effect mobility of 2.06 cm 2 /Vs, a threshold voltage of 3.40 V, an on/off current ratio of 6.0 × 10 3 A/A, and a subthresh...

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Bibliographic Details
Published inMolecular Crystals and Liquid Crystals Vol. 586; no. 1; pp. 161 - 167
Main Authors Kim, Jung-Hye, Kim, Joonwoo, Lee, Gwang Jun, Jeong, Jaewook, Choi, Byeongdae
Format Journal Article
LanguageEnglish
Published Philadelphia Taylor & Francis Group 01.01.2013
Taylor & Francis Ltd
Subjects
a-IGZO
Copper
copper ink
Crystals
DRAINS
Electric currents
Electric fields
Electrodes
ELECTRONIC PRODUCTS
Leakage current
oxide-based TFTs
screen printing
Semiconductor devices
source/drain electrodes
Thin film transistors
THIN FILMS
thin-film transistor
TRANSISTORS
ZINC OXIDE
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Summary:We report screen-printed copper source/drain electrodes for a-InGaZnO (a-IGZO) thin-film transistors (TFTs). The best electrical characteristics of the a-IGZO TFTs were a field-effect mobility of 2.06 cm 2 /Vs, a threshold voltage of 3.40 V, an on/off current ratio of 6.0 × 10 3 A/A, and a subthreshold swing of 7.02 V/decade. Resulting TFT performances indicate that blocking the inter-diffusion of Cu and impurities is a key factor to fabricate low leakage current and high performance a-IGZO TFTs with printed Cu S/D electrodes.
Bibliography:ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
ISSN:1542-1406
1563-5287
1527-1943
DOI:10.1080/15421406.2013.853531