A comparison of MBE- and MOCVD-grown GaInNAs

• Published in: Journal of crystal growth Vol. 251; no. 1; pp. 392 - 398
• Main Authors: Ptak, A.J., Johnston, S.W., Kurtz, Sarah, Friedman, D.J., Metzger, W.K.
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Amsterdam Elsevier B.V 01.04.2003; Elsevier
• Subjects: A1. Impurities; A1. Point defects; A3. Metalorganic chemical vapor deposition; A3. Molecular beam epitaxy; B1. Nitrides; Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.); Condensed matter: electronic structure, electrical, magnetic, and optical properties; Cross-disciplinary physics: materials science; rheology; Electron states; Exact sciences and technology; Iii-v semiconductors; Impurity and defect levels; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Molecular, atomic, ion, and chemical beam epitaxy; Physics; 71.55.Eq; A3. Molecular beam epitaxy; A1. Point defects; B1. Nitrides; A3. Metalorganic chemical vapor deposition; 81.15.Hi; 81.15.Gh; A1. Impurities; Inorganic compounds; Epitaxial layers; Point defects; Crystal growth from vapors; Experimental study; MOCVD; Indium Arsenides nitrides; Nitrides; Gallium Arsenides nitrides; Impurities; Molecular beam epitaxy; Heteroepitaxy; Arsenides nitrides; 71.55.Eq Al. Impurities: Al. Point defects; Comparative study; Arsenides; III-V semiconductors
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/S0022-0248(02)02201-7

We have been able to discount three point defects as the factor limiting GaInNAs material quality by comparing samples grown by two different growth techniques. Samples with vastly different concentrations of hydrogen and carbon have very similar properties in terms of deep levels, mobilities, and minority-carrier lifetimes. In addition, growth of hydrogen-free samples and corresponding measurements of vacancies provide strong evidence that gallium vacancies have an effect, but are not a limiting defect.