Structure and optoelectronic properties of multi-element oxide thin film

• Published in: Applied surface science Vol. 257; no. 14; pp. 6073 - 6078
• Main Authors: Yu, Ruei-Sung, Huang, Chueh-Jung, Huang, Rong-Hsin, Sun, Chung-Hsing, Shieu, Fuh-Sheng
• Format: Journal Article
• Language: English
• Published: Amsterdam Elsevier B.V 01.05.2011; Elsevier
• Subjects: Condensed matter: electronic structure, electrical, magnetic, and optical properties; Condensed matter: structure, mechanical and thermal properties; Cross-disciplinary physics: materials science; rheology; Energy gaps (solid state); Exact sciences and technology; Multi-element oxide; N-type semiconductors; Optoelectronic properties; Optoelectronics; Oxides; Oxygen content; Photonic band gaps; Physics; Semiconductor; Semiconductors; Structure; Thin films; Transparent conducting oxide; X-ray photoelectron spectroscopy; Semiconductor; Optoelectronic properties; Structure; Multi-element oxide; Transparent conducting oxide; Thin films; Semiconductor materials
• ISSN: 0169-4332; 1873-5584
• DOI: 10.1016/j.apsusc.2011.01.139

► The (ZnSnCuTiNb) 1 − x O x films are all of amorphous without any multi-phase structure. ► By controlling the oxygen content which changes electron binding energy of the cations, we can alter the electrical and optical properties of the films. ► The (ZnSnCuTiNb) 1 − x O x films possess the characteristics of optoelectronic semiconductor whose oxygen content are 51.6 and 56 atom%. ► These films have carrier concentrations of 2.62 × 10 20 and 1.37 × 10 17 cm −3, and conductivities ( σ) of 57.2 and 9.45 × 10 −3 (Ω cm) −1, and indirect band gaps of 1.69 and 2.26 eV, respectively. This paper focuses on analyzing structural and optoelectronic properties of (ZnSnCuTiNb) 1 − x O x films. The results of XRD and HRTEM indicate that the (ZnSnCuTiNb) 1 − x O x films are all of amorphous without any multi-phase structure. XPS analysis confirms that the increase of the oxygen content makes the cations electron binding energy higher, suggesting the removal of valence electrons or the extent of oxidation can change the optoelectronic properties of the films. The (ZnSnCuTiNb) 1 − x O x films possess the characteristics of optoelectronic semiconductor whose oxygen content are 51.6 and 56 atom%. These films have carrier concentrations of 2.62 × 10 20 and 1.37 × 10 17 cm −3, and conductivities ( σ) of 57.2 and 9.45 × 10 −3 (Ω cm) −1, and indirect band gaps of 1.69 and 2.26 eV, respectively. They are n-type oxide semiconductors.