Self-heating effect compensation in HBTs and its analysis and simulation

A simple technique, inserting a specified resistance in the bias circuit, to compensate self-heating effect in DC and pulse characteristics of HBTs is proposed and demonstrated. Utilizing the bias scheme dependence of HBT behaviors, the compensation is achieved due to the cancellation of the positiv...

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Bibliographic Details
Published inIEEE transactions on electron devices Vol. 48; no. 11; pp. 2640 - 2646
Main Authors Yu Zhu, Twynam, J.K., Yagura, M., Hasegawa, M., Hasegawa, T., Eguchi, Y., Amano, Y., Suematsu, E., Sakuno, K., Matsumoto, N., Sato, H., Hashizume, N.
Format Journal Article
LanguageEnglish
Published New York IEEE 01.11.2001
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subjects
Bias
Cancellation
Circuits
Compensation
Computer simulation
Exact solutions
Heterojunction bipolar transistors
Mathematical analysis
Simulation
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Summary:A simple technique, inserting a specified resistance in the bias circuit, to compensate self-heating effect in DC and pulse characteristics of HBTs is proposed and demonstrated. Utilizing the bias scheme dependence of HBT behaviors, the compensation is achieved due to the cancellation of the positive and negative thermal-electric feedback inside HBTs. An analytical expression relating the specified resistance with the physical parameters of HBT is presented. The accurate simulation of both the self-heating effect and its compensation is, for the first time, demonstrated with a modified Gummel-Poon model.
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ISSN:0018-9383
1557-9646
DOI:10.1109/16.960390