Room-temperature operation of a resonant-tunneling hot-electron transistor based integrated circuit

• Published in: IEEE electron device letters Vol. 14; no. 9; pp. 441 - 443
• Main Authors: Moise, T.S., Seabaugh, A.C., Beam, E.A., Randall, J.N.
• Format: Journal Article
• Language: English
• Published: New York, NY IEEE 01.09.1993; Institute of Electrical and Electronics Engineers
• Subjects: Applied sciences; Circuits; Contact resistance; Design. Technologies. Operation analysis. Testing; Electronics; Exact sciences and technology; Indium phosphide; Integrated circuits; Leakage current; Potential energy; Resistors; Resonant tunneling devices; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Temperature; Thin film transistors; Transmission line measurements; Resonant tunnel effect; Waveform; Logical function; Semiconductor device; Output voltage; Integrated circuit; Transfer characteristic; Energy diagram; Conduction band; III-V compound; Electrical characteristic
• ISSN: 0741-3106; 1558-0563
• DOI: 10.1109/55.244713

The first resonant-tunneling hot-electron transistor (RHET) EXCLUSIVE-NOR integrated circuit that operates at room temperature is demonstrated. The XNOR circuit consisting of a single resonant-tunneling transistor and four thin-film resistors, exhibits a 500-mV output voltage swing between the high- and low-logic levels when biased with a 1.8-V supply. The transistor, which features a novel InGaP collector barrier, has a peak current density of 4*10/sup 4/ A-cm/sup -2/, a common-base transfer coefficient of 0.9, and a peak-to-valley current ratio of 10:1 when operated in a common-emitter mode.< >