Efficient hybrid organic/inorganic photovoltaic cells utilizing n-type pentacene and intrinsic/p-type hydrogenated amorphous silicon
We demonstrate efficient hybrid inorganic/organic p–i–n photovoltaic (PV) devices with a p-type-doped hydrogenated amorphous silicon (a-Si:H), intrinsic a-Si:H, and an organic semiconductor, pentacene. The correlation between the electrical properties of the PV devices and the morphological properti...
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Published in | Solar energy materials and solar cells Vol. 95; no. 8; pp. 2407 - 2411 |
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Main Authors | , , , , , , |
Format | Journal Article Conference Proceeding |
Language | English |
Published |
Amsterdam
Elsevier B.V
01.08.2011
Elsevier |
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Abstract | We demonstrate efficient hybrid inorganic/organic
p–i–n photovoltaic (PV) devices with a
p-type-doped hydrogenated amorphous silicon (a-Si:H), intrinsic a-Si:H, and an organic semiconductor, pentacene. The correlation between the electrical properties of the PV devices and the morphological properties of the pentacene films were investigated using absorption spectroscopy, X-ray diffraction, and scanning electron microscopy. The maximum power conversion efficiency can be increased by one order with respect to the devices using different thicknesses of a pentacene layer from 0.32% at 10
nm to above 3.0% at 30
nm. Photocarriers in PVs are suggested to be mainly generated in the intrinsic a-Si:H layer. The pentacene layer is used as the exciton-blocking and electron-transport layer. Thus, the structural quality of pentacene films plays an important role in PV performance.
[Display omitted] .
► We demonstrate efficient hybrid
p–
i–
n solar cells by combing a-Si:H and pentacene. ► Photovoltaic properties depend on the structural quality of pentacene layer. ► The pentacene layer is used as the exciton-blocking and electron-transport layer. ► The power conversion efficiency was over 3.0% when using 30
nm pentacene films. |
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AbstractList | We demonstrate efficient hybrid inorganic/organic
p–i–n photovoltaic (PV) devices with a
p-type-doped hydrogenated amorphous silicon (a-Si:H), intrinsic a-Si:H, and an organic semiconductor, pentacene. The correlation between the electrical properties of the PV devices and the morphological properties of the pentacene films were investigated using absorption spectroscopy, X-ray diffraction, and scanning electron microscopy. The maximum power conversion efficiency can be increased by one order with respect to the devices using different thicknesses of a pentacene layer from 0.32% at 10
nm to above 3.0% at 30
nm. Photocarriers in PVs are suggested to be mainly generated in the intrinsic a-Si:H layer. The pentacene layer is used as the exciton-blocking and electron-transport layer. Thus, the structural quality of pentacene films plays an important role in PV performance.
[Display omitted] .
► We demonstrate efficient hybrid
p–
i–
n solar cells by combing a-Si:H and pentacene. ► Photovoltaic properties depend on the structural quality of pentacene layer. ► The pentacene layer is used as the exciton-blocking and electron-transport layer. ► The power conversion efficiency was over 3.0% when using 30
nm pentacene films. We demonstrate efficient hybrid inorganic/organic p-i-n photovoltaic (PV) devices with a p-type-doped hydrogenated amorphous silicon (a-Si:H), intrinsic a-Si:H, and an organic semiconductor, pentacene. The correlation between the electrical properties of the PV devices and the morphological properties of the pentacene films were investigated using absorption spectroscopy, X-ray diffraction, and scanning electron microscopy. The maximum power conversion efficiency can be increased by one order with respect to the devices using different thicknesses of a pentacene layer from 0.32% at 10 nm to above 3.0% at 30 nm. Photocarriers in PVs are suggested to be mainly generated in the intrinsic a-Si:H layer. The pentacene layer is used as the exciton-blocking and electron-transport layer. Thus, the structural quality of pentacene films plays an important role in PV performance. |
Author | Chan, Chien-Hung Yang Lien, Shui Weng, Ko-Wei Cheng, Horng-Long Huang, Jung-Jie Chao, Ching-Hsun Wu, Fu-Chiao |
Author_xml | – sequence: 1 givenname: Ching-Hsun surname: Chao fullname: Chao, Ching-Hsun organization: Dow Advance Materials EM, Dow Chemical, No. 6, Kesi 2nd Rd., Chunan, Miaoli, Chunan Site, Hsinchu Science-Based Industrial Park 35053, Taiwan – sequence: 2 givenname: Chien-Hung surname: Chan fullname: Chan, Chien-Hung organization: Department of Materials Science and Engineering, National Chung Hsing University, 250, Kuo Kuang Road, Taichung 402, Taiwan – sequence: 3 givenname: Fu-Chiao surname: Wu fullname: Wu, Fu-Chiao organization: Institute of Electro-Optical Science and Engineering, Center for Micro/Nano Science and Technology, and Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 701, Taiwan – sequence: 4 givenname: Jung-Jie surname: Huang fullname: Huang, Jung-Jie organization: Department of Materials Science and Engineering, Mingdao University, 369-B, Wen-Hua Road, Peetow, Chang-Hwa, Taiwan – sequence: 5 givenname: Shui surname: Yang Lien fullname: Yang Lien, Shui organization: Department of Materials Science and Engineering, Mingdao University, 369-B, Wen-Hua Road, Peetow, Chang-Hwa, Taiwan – sequence: 6 givenname: Ko-Wei surname: Weng fullname: Weng, Ko-Wei organization: Department of Materials Science and Engineering, Mingdao University, 369-B, Wen-Hua Road, Peetow, Chang-Hwa, Taiwan – sequence: 7 givenname: Horng-Long surname: Cheng fullname: Cheng, Horng-Long email: shlcheng@mail.ncku.edu.tw organization: Institute of Electro-Optical Science and Engineering, Center for Micro/Nano Science and Technology, and Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 701, Taiwan |
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CitedBy_id | crossref_primary_10_1002_pip_2499 crossref_primary_10_1039_c2jm14943e crossref_primary_10_1039_C5RA08605A crossref_primary_10_7567_APEX_7_031603 crossref_primary_10_1002_app_48952 crossref_primary_10_1016_j_ijleo_2016_11_103 crossref_primary_10_1016_j_nanoen_2012_07_023 crossref_primary_10_1063_1_4824985 crossref_primary_10_1002_pip_2263 crossref_primary_10_1016_j_synthmet_2013_04_030 crossref_primary_10_1016_j_synthmet_2015_06_021 crossref_primary_10_1088_0022_3727_48_19_195102 crossref_primary_10_1186_1556_276X_7_377 |
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Keywords | Organic semiconductors Pentacene Photovoltaic effect Inorganic semiconductors Hybrid solar cells Performance evaluation Scanning electron microscopy Exciton Electron transport layer Conversion rate Organic solar cells X ray diffraction Photovoltaic cell Solar cell Thickness Absorption spectrometry Organic-inorganic hybrid materials p type semiconductor Amorphous hydrogenated material Energy conversion n type semiconductor Electrical characteristic |
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Snippet | We demonstrate efficient hybrid inorganic/organic
p–i–n photovoltaic (PV) devices with a
p-type-doped hydrogenated amorphous silicon (a-Si:H), intrinsic... We demonstrate efficient hybrid inorganic/organic p-i-n photovoltaic (PV) devices with a p-type-doped hydrogenated amorphous silicon (a-Si:H), intrinsic... |
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SubjectTerms | Applied sciences Direct energy conversion and energy accumulation Electrical engineering. Electrical power engineering Electrical power engineering Energy Exact sciences and technology Hybrid solar cells Inorganic semiconductors Natural energy Organic semiconductors Pentacene Photoelectric conversion Photovoltaic conversion Photovoltaic effect Solar cells. Photoelectrochemical cells Solar energy |
Title | Efficient hybrid organic/inorganic photovoltaic cells utilizing n-type pentacene and intrinsic/p-type hydrogenated amorphous silicon |
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