Efficient hybrid organic/inorganic photovoltaic cells utilizing n-type pentacene and intrinsic/p-type hydrogenated amorphous silicon
We demonstrate efficient hybrid inorganic/organic p–i–n photovoltaic (PV) devices with a p-type-doped hydrogenated amorphous silicon (a-Si:H), intrinsic a-Si:H, and an organic semiconductor, pentacene. The correlation between the electrical properties of the PV devices and the morphological properti...
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Published in | Solar energy materials and solar cells Vol. 95; no. 8; pp. 2407 - 2411 |
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Main Authors | , , , , , , |
Format | Journal Article Conference Proceeding |
Language | English |
Published |
Amsterdam
Elsevier B.V
01.08.2011
Elsevier |
Subjects | |
Online Access | Get full text |
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Summary: | We demonstrate efficient hybrid inorganic/organic
p–i–n photovoltaic (PV) devices with a
p-type-doped hydrogenated amorphous silicon (a-Si:H), intrinsic a-Si:H, and an organic semiconductor, pentacene. The correlation between the electrical properties of the PV devices and the morphological properties of the pentacene films were investigated using absorption spectroscopy, X-ray diffraction, and scanning electron microscopy. The maximum power conversion efficiency can be increased by one order with respect to the devices using different thicknesses of a pentacene layer from 0.32% at 10
nm to above 3.0% at 30
nm. Photocarriers in PVs are suggested to be mainly generated in the intrinsic a-Si:H layer. The pentacene layer is used as the exciton-blocking and electron-transport layer. Thus, the structural quality of pentacene films plays an important role in PV performance.
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► We demonstrate efficient hybrid
p–
i–
n solar cells by combing a-Si:H and pentacene. ► Photovoltaic properties depend on the structural quality of pentacene layer. ► The pentacene layer is used as the exciton-blocking and electron-transport layer. ► The power conversion efficiency was over 3.0% when using 30
nm pentacene films. |
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Bibliography: | ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 23 |
ISSN: | 0927-0248 1879-3398 |
DOI: | 10.1016/j.solmat.2011.04.014 |