Photoluminescence characterization of Cd-annealing effects on high purity CdTe single crystals

• Published in: Journal of crystal growth Vol. 252; no. 1; pp. 102 - 106
• Main Authors: Song, S.H., Wang, J.F., Lalev, G.M., He, L., Isshiki, M.
• Format: Journal Article
• Language: English
• Published: Amsterdam Elsevier B.V 01.05.2003; Elsevier
• Subjects: A1. Defects; A2. Bridgman technique; A2. Single crystal growth; B1. Cadmium compounds; B2. Semiconducting II–VI materials; Cross-disciplinary physics: materials science; rheology; Exact sciences and technology; Materials science; Materials synthesis; materials processing; Physics; Purification; 78.55.Et; A2. Bridgman technique; B1. Cadmium compounds; B2. Semiconducting II–VI materials; 85.40.Ry; A2. Single crystal growth; 78.55.−m; 81.10.Fq; A1. Defects; Immersion method; 78.55.-m; Inorganic compounds; Purification; Transition element compounds; Photoluminescence; Controlled atmospheres; Experimental study; Excitonic process; Monocrystals; II-VI semiconductors; Cadmium tellurides; 81.10.Fq A1. Defects; Optical method; B2 Semiconducting II-VI materials; Control method; Thermal annealing; Bridgman method; High purity
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/S0022-0248(03)00879-0

The Effects of Cd-atmosphere annealing and Cd-dip treatment on high purity CdTe single crystals have been studied thoroughly. It has been presented that the Cd-dip treatment could change the dominant (A 0, X) peak in PL spectrum for as-grown crystal into (D 0, X) for Cd-dipped crystal. This result shows that the conductivity of specimen has been converted from p-type into n-type. By measuring the reflective spectrum of the Cd-dipped specimen, very clear free-exciton (FE) emission peak has been detected. This observation of FE emission indicates that the CdTe single crystal is of very high purity.