GaN Ku-band low-noise amplifier design including RF life test

• Published in: International journal of numerical modelling Vol. 28; no. 6; pp. 717 - 731
• Main Authors: D'Angelo, Sara, Nalli, Andrea, Resca, Davide, Raffo, Antonio, Florian, Corrado, Scappaviva, Francesco, Vannini, Giorgio, Rochette, Stephane, Muraro, Jean-Luc
• Format: Journal Article
• Language: English
• Published: Bognor Regis Blackwell Publishing Ltd 01.11.2015; Wiley Subscription Services, Inc
• Subjects: AlGaN/GaN HEMT; Aluminum gallium nitrides; Amplifiers; Devices; electromagnetic modeling; Gallium nitrides; High electron mobility transistors; low-noise amplifier; Mathematical models; MMIC amplifier; noise modeling; Radio frequencies; robustness; Semiconductor devices
• ISSN: 0894-3370; 1099-1204
• DOI: 10.1002/jnm.2066

As well as largely exploited for microwave high‐power applications, aluminum gallium nitride (AlGaN)/GaN high electron mobility transistor (HEMT) technologies have demonstrated promising results for the design of low‐noise, high dynamic range, and highly robust amplifiers. In this manuscript, we describe the design and characterization of a Ku‐band monolithic microwave integrated circuit low‐noise amplifier for telecom space applications, exploiting an industrial AlGaN/GaN 0.25‐µm HEMT on silicon carbide process. In the frequency band 12.75–14.8 GHz, the LNA features over 20 dB linear gain with a noise figure around 1.8 dB. Input and output return losses are nearly 10 dB. Power dissipation is 700 mW in linear operation. An innovative transistor model based on electromagnetic analyses and small‐signal and noise measurements has been developed to improve the predictions of the foundry model on source‐degenerated devices. A systematic radio frequency (RF) life stress test campaign performed on the designed low‐noise amplifier demonstrated a safe operating area of 15 dBm of overdrive input power. Copyright © 2015 John Wiley & Sons, Ltd.