Structural,Transport and Optical Properties of Boron-doped Zinc Oxide Nanocrystalline

The paper has reported the structural,transport and optical properties of boron doped zinc oxide(ZnO:B) thin films grown on glass substrate by sol-gel spin coating process.It is observed from the analysis of the X-ray diffraction(XRD) results that the crystalline quality of the films is improved wit...

Full description

Saved in:
Bibliographic Details
Published inJournal of materials science & technology Vol. 27; no. 6; pp. 481 - 488
Main Authors Kumar, Vinod, Singh, R.G., Purohit, L.P., Mehra, R.M.
Format Journal Article
LanguageEnglish
Published Elsevier Ltd 2011
Subjects
Online AccessGet full text
ISSN1005-0302
1941-1162
DOI10.1016/s1005-0302(11)60095-9

Cover

Loading…
More Information
Summary:The paper has reported the structural,transport and optical properties of boron doped zinc oxide(ZnO:B) thin films grown on glass substrate by sol-gel spin coating process.It is observed from the analysis of the X-ray diffraction(XRD) results that the crystalline quality of the films is improved with increasing B concentration.A crystallite size of ~17 nm is obtained for B doped films.A minimum resistivity of 7.9×10-4 Ω.cm is obtained at 0.6 at.% of B concentration in the ZnO:B films.Ionized and intragrain cluster scattering are found to dominate the scattering mechanism in ZnO:B films.Optical interference pattern in transmittance spectra shows good homogeneity with a transparency of ~88% in the visible region.The band gap of the films is increased from 3.24 to 3.35 eV with increasing B concentration.Band gap widening is analyzed in terms of Burstein-Moss shift.The origin of the broad band photoluminescence(PL) spectra is explained in terms of the intragrain cluster scattering.
Bibliography:21-1315/TG
Zinc oxide; Boron; Photoluminescence; Intragrain; B-M shift
The paper has reported the structural,transport and optical properties of boron doped zinc oxide(ZnO:B) thin films grown on glass substrate by sol-gel spin coating process.It is observed from the analysis of the X-ray diffraction(XRD) results that the crystalline quality of the films is improved with increasing B concentration.A crystallite size of ~17 nm is obtained for B doped films.A minimum resistivity of 7.9×10-4 Ω.cm is obtained at 0.6 at.% of B concentration in the ZnO:B films.Ionized and intragrain cluster scattering are found to dominate the scattering mechanism in ZnO:B films.Optical interference pattern in transmittance spectra shows good homogeneity with a transparency of ~88% in the visible region.The band gap of the films is increased from 3.24 to 3.35 eV with increasing B concentration.Band gap widening is analyzed in terms of Burstein-Moss shift.The origin of the broad band photoluminescence(PL) spectra is explained in terms of the intragrain cluster scattering.
ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:1005-0302
1941-1162
DOI:10.1016/s1005-0302(11)60095-9