Structural,Transport and Optical Properties of Boron-doped Zinc Oxide Nanocrystalline
The paper has reported the structural,transport and optical properties of boron doped zinc oxide(ZnO:B) thin films grown on glass substrate by sol-gel spin coating process.It is observed from the analysis of the X-ray diffraction(XRD) results that the crystalline quality of the films is improved wit...
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Published in | Journal of materials science & technology Vol. 27; no. 6; pp. 481 - 488 |
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Main Authors | , , , |
Format | Journal Article |
Language | English |
Published |
Elsevier Ltd
2011
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Subjects | |
Online Access | Get full text |
ISSN | 1005-0302 1941-1162 |
DOI | 10.1016/s1005-0302(11)60095-9 |
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Summary: | The paper has reported the structural,transport and optical properties of boron doped zinc oxide(ZnO:B) thin films grown on glass substrate by sol-gel spin coating process.It is observed from the analysis of the X-ray diffraction(XRD) results that the crystalline quality of the films is improved with increasing B concentration.A crystallite size of ~17 nm is obtained for B doped films.A minimum resistivity of 7.9×10-4 Ω.cm is obtained at 0.6 at.% of B concentration in the ZnO:B films.Ionized and intragrain cluster scattering are found to dominate the scattering mechanism in ZnO:B films.Optical interference pattern in transmittance spectra shows good homogeneity with a transparency of ~88% in the visible region.The band gap of the films is increased from 3.24 to 3.35 eV with increasing B concentration.Band gap widening is analyzed in terms of Burstein-Moss shift.The origin of the broad band photoluminescence(PL) spectra is explained in terms of the intragrain cluster scattering. |
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Bibliography: | 21-1315/TG Zinc oxide; Boron; Photoluminescence; Intragrain; B-M shift The paper has reported the structural,transport and optical properties of boron doped zinc oxide(ZnO:B) thin films grown on glass substrate by sol-gel spin coating process.It is observed from the analysis of the X-ray diffraction(XRD) results that the crystalline quality of the films is improved with increasing B concentration.A crystallite size of ~17 nm is obtained for B doped films.A minimum resistivity of 7.9×10-4 Ω.cm is obtained at 0.6 at.% of B concentration in the ZnO:B films.Ionized and intragrain cluster scattering are found to dominate the scattering mechanism in ZnO:B films.Optical interference pattern in transmittance spectra shows good homogeneity with a transparency of ~88% in the visible region.The band gap of the films is increased from 3.24 to 3.35 eV with increasing B concentration.Band gap widening is analyzed in terms of Burstein-Moss shift.The origin of the broad band photoluminescence(PL) spectra is explained in terms of the intragrain cluster scattering. ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23 |
ISSN: | 1005-0302 1941-1162 |
DOI: | 10.1016/s1005-0302(11)60095-9 |