Enhanced room-temperature positive magnetoresistance of a-C:Fe film

Fe-doped amorphous carbon (a-C:Fe) film and pure amorphous carbon (a-C) film were synthesized on n-Si substrate using pulsed laser deposition. The a-C:Fe film has a positive magnetoresistance (15% at magnetic field B = 1 T) at room temperature, while it has a negative magnetoresistance below 260 K....

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Published inCarbon (New York) Vol. 45; no. 9; pp. 1764 - 1768
Main Authors Tian, P., Zhang, X., Xue, Q.Z.
Format Journal Article
LanguageEnglish
Published Oxford Elsevier Ltd 01.08.2007
Elsevier Science
Subjects
Cross-disciplinary physics: materials science; rheology
Exact sciences and technology
Fullerenes and related materials; diamonds, graphite
Materials science
Physics
Specific materials
Films
Ambient temperature
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Summary:Fe-doped amorphous carbon (a-C:Fe) film and pure amorphous carbon (a-C) film were synthesized on n-Si substrate using pulsed laser deposition. The a-C:Fe film has a positive magnetoresistance (15% at magnetic field B = 1 T) at room temperature, while it has a negative magnetoresistance below 260 K. The electrical conduction in a-C:Fe film is one order of magnitude higher than that in pure a-C film. It is found that a-C:Fe film has very different conduction mechanism from that of pure a-C film. The activation energy of electron conduction in a-C:Fe film could be tuned significantly by magnetic field. The magnetoresistance effect of the a-C:Fe film seems difficult to explain by known magnetoresistance mechanisms.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0008-6223
1873-3891
DOI:10.1016/j.carbon.2007.05.005