Device characteristics of lateral and vertical type organic field effect transistors

• Published in: Thin solid films Vol. 393; no. 1; pp. 362 - 367
• Main Authors: Kudo, Kazuhiro, Iizuka, Masaaki, Kuniyoshi, Shigekazu, Tanaka, Kuniaki
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Lausanne Elsevier B.V 01.08.2001; Elsevier Science
• Subjects: Applied sciences; Copper phthalocyanine; Electronics; Exact sciences and technology; Lateral type FET; Organic field effect transistor; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Static induction transistor; Transistors; Vertical type FET; Copper phthalocyanine; Vertical type FET; Organic field effect transistor; Static induction transistor; Lateral type FET; Field effect transistor; Dynamic characteristic; Metallophthalocyanine; Copper complex; Electrical characteristic; Organic compounds
• ISSN: 0040-6090; 1879-2731
• DOI: 10.1016/S0040-6090(01)01120-8

Vertical type field effect transistors (FETs) are expected to be used for various organic devices because of their low-voltage, high-current and high-speed operation. We have fabricated lateral and vertical type FETs using copper-phthalocyanine evaporated films and measured the basic static and dynamic characteristics of these FETs. Although both transistors show field effect characteristics, the vertical type FET showed high-frequency and high-current characteristics under relatively low-voltage conditions as compared with those of lateral type FETs. These results demonstrate that the vertical FET operates as a static induction transistor and the short length between the source, drain and gate electrodes in the device structure improves the device characteristics.