Sputter deposition of gallium nitride films using a GaAs target

GaAs was used as the target material for the deposition of GaN films by reactive sputtering. The films were grown at different compositions of the sputtering gas mixture (0–100% nitrogen in argon) at substrate temperatures of 450 and 550°C. The films were studied using XRD and XPS techniques. Even a...

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Bibliographic Details
Published inThin solid films Vol. 333; no. 1; pp. 9 - 12
Main Authors Elkashef, Nahlah, Srinivasa, R.S., Major, S., Sabharwal, S.C., Muthe, K.P.
Format Journal Article
LanguageEnglish
Published Lausanne Elsevier B.V 23.11.1998
Elsevier Science
Subjects
Cross-disciplinary physics: materials science; rheology
Deposition by sputtering
Deposition process
Exact sciences and technology
Materials science
Methods of deposition of films and coatings; film growth and epitaxy
Nitrides
Physics
Semiconductors
Sputtering
Nitrides
Semiconductors
Sputtering
Deposition process
Inorganic compounds
Semiconductor materials
Films
Gallium nitrides
Binary compounds
X radiation
Reactive sputtering
Crystal growth from vapors
XRD
Experimental study
Photoelectron spectroscopy
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Summary:GaAs was used as the target material for the deposition of GaN films by reactive sputtering. The films were grown at different compositions of the sputtering gas mixture (0–100% nitrogen in argon) at substrate temperatures of 450 and 550°C. The films were studied using XRD and XPS techniques. Even a small quantity of nitrogen in the sputtering medium was found to prevent the formation of GaAs on the substrate. Films grown at 550°C using 100% nitrogen as the sputtering-reactive gas were found to be single phase (0002) oriented hexagonal gallium nitride and revealed complete absence of arsenic.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0040-6090
1879-2731
DOI:10.1016/S0040-6090(98)00550-1