Mixed phase Ge2Sb2Te5 thin films with temperature independent resistivity

The electrical properties of polycrystalline Ge2Sb2Te5 thin films containing both the metastable fcc phase and the stable hcp phase have been studied. The resistivity and its temperature dependence have been modelled using effective medium approximation. By varying the volume fraction of the two pha...

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Bibliographic Details
Published inAIP advances Vol. 3; no. 1; p. 012105
Main Authors Privitera, S., Garozzo, C., Alberti, A., Perniola, L., De Salvo, B.
Format Journal Article
LanguageEnglish
Published AIP Publishing LLC 01.01.2013
Subjects
Approximation
Close packed lattices
Discontinuity
Electrical properties
Electrical resistivity
Hexagonal cells
Mathematical analysis
Thin films
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Summary:The electrical properties of polycrystalline Ge2Sb2Te5 thin films containing both the metastable fcc phase and the stable hcp phase have been studied. The resistivity and its temperature dependence have been modelled using effective medium approximation. By varying the volume fraction of the two phases it is possible to get films with different resistivities and temperature coefficient of resistance, changing without discontinuity from negative (fcc) to positive value (hcp). Mixed phase films with resistivity almost independent of the temperature are obtained at about 4 mΩ cm.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:2158-3226
2158-3226
DOI:10.1063/1.4775351