Electrochemically deposited p–n homojunction cuprous oxide solar cells

• Published in: Solar energy materials and solar cells Vol. 93; no. 1; pp. 153 - 157
• Main Authors: Han, Kunhee, Tao, Meng
• Format: Journal Article
• Language: English
• Published: Amsterdam Elsevier B.V 2009; Elsevier
• Subjects: Applied sciences; Cuprous oxide; Electrodeposition; Energy; Equipments, installations and applications; Exact sciences and technology; Natural energy; Photovoltaic conversion; Photovoltaic device; p–n homojunction; Resistivity; Solar cells. Photoelectrochemical cells; Solar energy; Photovoltaic device; Electrodeposition; p–n homojunction; Cuprous oxide; Resistivity; Solar cell; Voltage measurement; p n homojunctions; Electrical properties; Electrolyte solution; p-n homojunction; Copper oxide
• ISSN: 0927-0248; 1879-3398
• DOI: 10.1016/j.solmat.2008.09.023

The electrical properties of both p- and n-type cuprous oxide (Cu 2O) films electrochemically deposited from two electrolyte solutions were examined by current–voltage measurements. The resistivity of p-type Cu 2O varied from 3.2×10 5 to 2.0×10 8 Ω cm, while that of n-type Cu 2O from 2.5×10 7 to 8.0×10 8 Ω cm, depending on deposition conditions such as solution pH, deposition potential and temperature. With optimized deposition conditions for minimum resistivity, p–n homojunction Cu 2O solar cells were fabricated by a two-step deposition process. The p–n homojunction Cu 2O solar cells showed a conversion efficiency of 0.1% under AM1 illumination. The low efficiency is attributed to the high resistivity of p- and n-type Cu 2O, which require doping to reduce.