Flow and temperature field in molten silicon during Czochralski crystal growth in a cusp magnetic field

• Published in: Journal of crystal growth Vol. 193; no. 3; pp. 402 - 412
• Main Authors: Watanabe, Masahito, Eguchi, Minoru, Hibiya, Taketoshi
• Format: Journal Article
• Language: English
• Published: Amsterdam Elsevier B.V 01.10.1998; Elsevier
• Subjects: Cross-disciplinary physics: materials science; rheology; Cusp magnetic field; Czochralski crystal growth; Exact sciences and technology; Flow of fluids; Growth from melts; zone melting and refining; Heat transfer; Magnetic field effects; Mass transfer; Materials science; Melt flow; Methods of crystal growth; physics of crystal growth; Molten materials; Oxygen; Physics; Silicon; X ray radiography; Cusp magnetic field; 81.05.Cy; Czochralski crystal growth; Silicon; Melt flow; 81.10.Fq; 47.65.+a; Temperature distribution; Semiconductor materials; Cusp configuration; Magnetic field effects; Czochralski method; Flow pattern; Experimental study; Mass transfer; Oxygen additions; Nonmetals; Growth striation; Depth profiles; Heat transfer; Crystal growth from melts
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/S0022-0248(98)00529-6

Flow behavior of molten silicon and the oxygen-concentration distribution in crystals grown under three different types of cusp magnetic field (CMF) configuration were observed in order to investigate the effect of the magnetic field configuration on the heat and mass transfer in the melt during the crystal-growth processes. The molten-silicon flow in the CMF was directly observed by using an improved X-ray radiography system. The flow was strongly dependent on the CMF configuration, thus, the distribution of the oxygen concentration in the crystals grown under the CMF was also dependent on the CMF configuration. When the center of the CMF was positioned inside the melt, a homogeneous oxygen-concentration distribution was obtained due to the good axisymmetry and reduced flow velocity of the molten-silicon flow. In other cases, the oxygen concentration was inhomogeneously distributed in the crystals because the melt flow was not axisymmetric and its velocity fluctuated. The dependence of the molten-silicon flow on the CMF configuration is attributed to the magnetic field gradient in the melt.