Trapped oxygen in the grain boundaries of ZnO polycrystalline thin films prepared by plasma-enhanced chemical vapor deposition

• Published in: Materials letters Vol. 41; no. 4; pp. 159 - 163
• Main Authors: Kim, Young-Jin, Kim, Hyeong-Joon
• Format: Journal Article
• Language: English
• Published: Amsterdam Elsevier B.V 01.11.1999; Elsevier
• Subjects: Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.); Condensed matter: structure, mechanical and thermal properties; Cross-disciplinary physics: materials science; rheology; Defects and impurities: doping, implantation, distribution, concentration, etc; Exact sciences and technology; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Physics; Plasma-enhanced chemical vapor deposition; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); Thin film structure and morphology; Trapped oxygen; ZnO polycrystalline thin films; ZnO polycrystalline thin films; Trapped oxygen; Plasma-enhanced chemical vapor deposition; Grain boundaries; Oxygen; RBS; Inorganic compounds; Transition element compounds; Polycrystals; Binary compounds; Hall effect; Crystal growth from vapors; Experimental study; Nonstoichiometry; Thin films; Trapped ions; Zinc oxides; PECVD; TEM
• ISSN: 0167-577X; 1873-4979
• DOI: 10.1016/S0167-577X(99)00124-X

ZnO thin films were deposited on Si wafers and glass substrates using diethylzinc (Zn(C 2H 5) 2) and Ar/N 2O mixed gases by plasma-enhanced chemical vapor deposition (PECVD). The Zn:O ratio of the thin film was analyzed by Rutherford backscattering spectrometry (RBS). It was observed that the values were less than unity, which meant that excess oxygen existed in the films. It could be determined that this oxygen was located in the grain boundaries of the ZnO polycrystalline thin films from the results of RBS, cross-sectional TEM and the electrical properties by Hall measurement.