Hollow-cathode chemical vapor deposition of thick, low-stress diamond-like carbon films
•Smooth, low-stress, amorphous hydrogenated carbon films via plasma chemical vapor deposition.•Higher density films grown when using Ar plasma compared to N2 or H2 plasma.•Plasma confinement via a magnetic field suggests improved gas ionization. A radio-frequency (RF), hollow-cathode plasma source w...
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Published in | Thin solid films Vol. 714; no. na; p. 138394 |
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Main Authors | , , , , , , , |
Format | Journal Article |
Language | English |
Published |
United States
Elsevier B.V
30.11.2020
Elsevier |
Subjects | |
Online Access | Get full text |
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Summary: | •Smooth, low-stress, amorphous hydrogenated carbon films via plasma chemical vapor deposition.•Higher density films grown when using Ar plasma compared to N2 or H2 plasma.•Plasma confinement via a magnetic field suggests improved gas ionization.
A radio-frequency (RF), hollow-cathode plasma source with confining magnetic field is described for the chemical vapor deposition of thick ( > 10 µm), amorphous diamond-like carbon ablator films for inertial confinement fusion applications. Plasma is characterized by optical emission spectroscopy, while properties of the resultant films are measured by a combination of profilometry, Rutherford backscattering spectrometry, elastic recoil detection analysis, X-ray diffraction, Raman spectroscopy, and atomic force microscopy. The dependence of the deposition rate, film density, elemental composition, self-bias and residual stress is reported as a function of RF power. Higher density films were found when using Ar plasma, than N2 or H2 plasma. The coatings produced are x-ray amorphous, exhibit low compressive stress ( ~ 100 MPa), high density ( < 1.7 g/cm3), hydrogen content of ~ 30 at.%, and a low average roughness of 0.75 nm. Applications of these films as tunable-density ablators for inertial confinement fusion experiments are discussed. |
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Bibliography: | AC52-07NA27344 USDOE National Nuclear Security Administration (NNSA) LLNL-JRNL-804133 |
ISSN: | 0040-6090 1879-2731 |
DOI: | 10.1016/j.tsf.2020.138394 |