Hollow-cathode chemical vapor deposition of thick, low-stress diamond-like carbon films

•Smooth, low-stress, amorphous hydrogenated carbon films via plasma chemical vapor deposition.•Higher density films grown when using Ar plasma compared to N2 or H2 plasma.•Plasma confinement via a magnetic field suggests improved gas ionization. A radio-frequency (RF), hollow-cathode plasma source w...

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Published inThin solid films Vol. 714; no. na; p. 138394
Main Authors Miller, J., Ceballos, A., Bayu Aji, L.B., Moore, A., Wasz, C., Kucheyev, S.O., Elhadj, S., Falabella, S.
Format Journal Article
LanguageEnglish
Published United States Elsevier B.V 30.11.2020
Elsevier
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Summary:•Smooth, low-stress, amorphous hydrogenated carbon films via plasma chemical vapor deposition.•Higher density films grown when using Ar plasma compared to N2 or H2 plasma.•Plasma confinement via a magnetic field suggests improved gas ionization. A radio-frequency (RF), hollow-cathode plasma source with confining magnetic field is described for the chemical vapor deposition of thick ( >  10 µm), amorphous diamond-like carbon ablator films for inertial confinement fusion applications. Plasma is characterized by optical emission spectroscopy, while properties of the resultant films are measured by a combination of profilometry, Rutherford backscattering spectrometry, elastic recoil detection analysis, X-ray diffraction, Raman spectroscopy, and atomic force microscopy. The dependence of the deposition rate, film density, elemental composition, self-bias and residual stress is reported as a function of RF power. Higher density films were found when using Ar plasma, than N2 or H2 plasma. The coatings produced are x-ray amorphous, exhibit low compressive stress ( ~ 100 MPa), high density ( < 1.7 g/cm3), hydrogen content of  ~ 30 at.%, and a low average roughness of 0.75 nm. Applications of these films as tunable-density ablators for inertial confinement fusion experiments are discussed.
Bibliography:AC52-07NA27344
USDOE National Nuclear Security Administration (NNSA)
LLNL-JRNL-804133
ISSN:0040-6090
1879-2731
DOI:10.1016/j.tsf.2020.138394