“Temperature oscillation” as a real-time monitoring of the growth of 3C–SiC on Si substrate

• Published in: Applied surface science Vol. 254; no. 19; pp. 6235 - 6237
• Main Authors: Saito, Eiji, Konno, Atsushi, Ito, Takashi, Yasui, Kanji, Nakazawa, Hideki, Endoh, Tetsuo, Narita, Yuzuru, Suemitsu, Maki
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Amsterdam Elsevier B.V 30.07.2008; Elsevier Science
• Subjects: 3C–SiC; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Condensed matter: structure, mechanical and thermal properties; Cross-disciplinary physics: materials science; rheology; Exact sciences and technology; GSMBE; Heteroepitaxy; Physics; Pyrometric interferometry; Heteroepitaxy; GSMBE; Pyrometric interferometry; 3C–SiC; Silicon carbide; Inorganic compounds; Pyrometric interferometry,3C-SiC,GSMBE,Heteroepitaxy; GSMBE method; Silicon; Film growth; Interferometry
• ISSN: 0169-4332; 1873-5584
• DOI: 10.1016/j.apsusc.2008.02.190

Pyrometric interferometry has been observed during gas-source molecular beam epitaxy (GSMBE) of 3C–SiC on Si substrate using monomethyl silane. The period of the “temperature oscillation” is shown to correspond to λ/2 n, with the λ and n being the wavelength used in the monochromatic optical pyrometry and the refractive index of the grown film, respectively. As is the case for other heteroepitaxies, pyrometric interferometry may provide a feasible real-time monitoring method for the growth of 3C–SiC film on Si substrates.