Application of charge pumping technique for sub-micron MOSFET characterization

• Published in: Microelectronic engineering Vol. 40; no. 3; pp. 131 - 146
• Main Authors: Viswanathan, C.R., Rao, V.Ramgopal
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Amsterdam Elsevier B.V 01.11.1998; Elsevier Science
• Subjects: Applied sciences; Electronics; Exact sciences and technology; Integrated circuits; Integrated circuits by function (including memories and processors); Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Voltage threshold; MOS technology; Field effect transistor; Interface properties; Experimental result; Integrated circuit; Charge pumping; Low temperature; Electrical characteristic; Geometric element
• ISSN: 0167-9317; 1873-5568
• DOI: 10.1016/S0167-9317(98)00266-4

In this paper, charge pumping technique for MOSFET interface characterization will be reviewed. The basic principles of charge pumping technique will be elaborated and its evolution as an excellent tool for a thorough characterization of MOSFET interface properties will be illustrated. Published results regarding the applicability of charge pumping technique for a study of sub-micron MOSFET interface and its degradation under various electrical stress conditions and radiation will be analyzed. The effect of geometric components on charge pumping current as well as the recent reports of single interface trap characterization in sub-micron MOSFETs will be described. The application of charge pumping technique at cryogenic temperatures and in other MOS based devices will also be included.