Silicon ion implanted PMMA for soft electronics
The electrical conductivity and field-effect transconductance of polymethylmethacrylate (PMMA) subjected to implantation with 50 keV silicon ions at doses in the range from 10 14 to 10 17 ions/cm 2 were examined. The electrical response of Si +-implanted PMMA was studied by direct current (DC) and a...
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Published in | Organic electronics Vol. 9; no. 6; pp. 1051 - 1060 |
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Main Authors | , , , , , |
Format | Journal Article |
Language | English |
Published |
Amsterdam
Elsevier B.V
01.12.2008
Elsevier |
Subjects | |
Online Access | Get full text |
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Summary: | The electrical conductivity and field-effect transconductance of polymethylmethacrylate (PMMA) subjected to implantation with 50
keV silicon ions at doses in the range from 10
14 to 10
17 ions/cm
2 were examined. The electrical response of Si
+-implanted PMMA was studied by direct current (DC) and alternating current (AC) measurements and was related to the structure formed in the host polymer. In addition to the sizable enhancement of the conductivity with the implantation dose, the field-effect transconductance found in Si
+-implanted PMMA shows the potential of this material for soft-electronic applications. |
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ISSN: | 1566-1199 1878-5530 |
DOI: | 10.1016/j.orgel.2008.08.003 |