High performance selectively oxidized VCSELs and arrays for parallel high-speed optical interconnects

• Published in: IEEE transactions on advanced packaging Vol. 24; no. 4; pp. 442 - 449
• Main Authors: Mederer, F., Ecker, I., Joos, J., Kicherer, M., Unold, H.J., Ebeling, K.J., Grabherr, M., Jager, R., King, R., Wiedenmann, D.
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Piscataway, NY IEEE 01.11.2001; Institute of Electrical and Electronics Engineers; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Applied sciences; Arrays; Circuit properties; Data communication; Data transmission; Electric, optical and optoelectronic circuits; Electronic equipment and fabrication. Passive components, printed wiring boards, connectics; Electronics; Emission; Exact sciences and technology; Fibers; Filters; Gallium arsenide; Gallium arsenides; Indium gallium arsenide; Indium gallium arsenides; Integrated optics. Optical fibers and wave guides; Miscellaneous; Optical and optoelectronic circuits; Optical arrays; Optoelectronic devices; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Substrates; Surface emitting lasers; Surface resistance; Surface waves; Vertical cavity surface emitting lasers; Wavelengths; Ternary compound; Performance evaluation; Waveform; Integrated optics; Gallium arsenides; Bit error rate; Optical telecommunication; Data transmission; Flip chip; Electronic packaging; NRZ code; Optical interconnection; Optical fiber; Fiber filter; Quantum well; Single mode fiber; Coplanar line; Indium arsenides; Vertical cavity laser; Experimental result; Surface emitting laser; Transverse filter; Pseudorandom sequence; Plastics; Gradient index optics; Luminous intensity current characteristic
• ISSN: 1521-3323; 1557-9980
• DOI: 10.1109/6040.982827

High-bandwidth single-mode selectively oxidized vertical-cavity surface-emitting laser (VCSEL) arrays operate at 980 nm or 850 nm emission wavelength for substrate or epitaxial side emission. Coplanar feeding lines and polyimide passivation are used to reduce electrical parasitics in top-emitting GaAs and bottom-emitting InGaAs VCSELs. To enhance fundamental single-mode emission for larger devices of reduced series resistance a surface relief transverse mode filter is employed. Fabricated VCSELs are applied in various interconnect schemes. InGaAs quantum-well based VCSELs at 935 nm emission wavelength are investigated for use in perfluorinated graded-index plastic-optical fiber (GI-POF) links. We obtain a 7 Gb/s pseudo random bit sequence (PRBS) nonreturn-to-zero (NRZ) data transmission over 80 m long 155 /spl mu/m diameter GI-POF. We investigate data transmission over standard 1300 nm, 9 /spl mu/m core diameter single-mode fiber with selectively oxidized single-mode GaAs and InGaAs VCSELs. We achieve biased 3 Gb/s and bias-free 1 Gb/s pseudo-random data transmission over 4.3 km at 830 nm emission wavelength where a simple fiber mode filter is used to suppress intermodal dispersion caused by the second order fiber mode. For the first time, we demonstrate 12.5 Gb/s data rate transmission of PRBS signals over 100 m graded-index multimode fiber or 1 km single-mode fiber using high performance single-mode GaAs VCSELs of 12.3 GHz modulation bandwidth emitting at /spl lambda/=850 nm.