Circular photogalvanic effect at inter-band excitation in semiconductor quantum wells

We observed a circular photogalvanic effect (CPGE) in GaAs quantum wells at inter-band excitation. The spectral dependence of the CPGE is measured together with that of the polarization degree of the time-resolved photoluminescence. A theoretical model takes into account spin splitting of conduction...

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Bibliographic Details
Published inSolid state communications Vol. 128; no. 8; pp. 283 - 286
Main Authors Bel'kov, V.V., Ganichev, S.D., Schneider, Petra, Back, C., Oestreich, M., Rudolph, J., Hägele, D., Golub, L.E., Wegscheider, W., Prettl, W.
Format Journal Article
LanguageEnglish
Published Oxford Elsevier Ltd 01.11.2003
Elsevier
Subjects
A. Quantum wells
Condensed matter: electronic structure, electrical, magnetic, and optical properties
D. Spin-orbit effects
Electronic transport in condensed matter
Exact sciences and technology
Optical creation of spin polarized carriers
Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation
Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures
Physics
Quantum wells
Spin polarized transport
D. Spin-orbit effects
A. Quantum wells
78.67.De
72.25.Fe
Conduction bands
Polarization
Valence bands
Gallium arsenides
Inorganic compounds
Interband transitions
Quantum wells
78.67.De A. Quantum wells
Photoluminescence
Binary compounds
Experimental study
Time resolved spectra
Spin-orbit interactions
Photogalvanic effect
III-V semiconductors
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Summary:We observed a circular photogalvanic effect (CPGE) in GaAs quantum wells at inter-band excitation. The spectral dependence of the CPGE is measured together with that of the polarization degree of the time-resolved photoluminescence. A theoretical model takes into account spin splitting of conduction and valence bands.
ISSN:0038-1098
1879-2766
DOI:10.1016/j.ssc.2003.08.022