Investigation on the electrical characteristics of a pentacene thin-film transistor and its reliability under positive drain bias stress

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Bibliographic Details
Published inSemiconductor science and technology Vol. 26; no. 12; p. 125007
Main Authors Fan, Ching-Lin, Chiu, Ping-Cheng, Lin, Yu-Zuo, Yang, Tsung-Hsien, Chiang, Chin-Yuan
Format Journal Article
LanguageEnglish
Published Bristol IOP Publishing 07.12.2011
Institute of Physics
Subjects
Applied sciences
Electronics
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
Defect states
Grain size
Voltage threshold
Pentacene
Deposition rate
Fabrication property relation
Thin film
Gallium tellurides
Drain current
Thin film transistor
Electric field effect
Reliability
Vacuum deposition
Organic compounds
Charge carrier injection
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ISSN:0268-1242
1361-6641
DOI:10.1088/0268-1242/26/12/125007