Selective Dry Etching of AlGaAs-GaAs Heterojunction
Selective dry etching of GaAs to Al x Ga 1- x As ( x =0.3) using an etching gas composed of CCl 2 F 2 and helium was studied. Etching was carried out at gas composition ratios of P CCl 2 F 2 / P He above 0.25, total pressures of 0.5 to 5.0 Pa, and power densities of 0.18 to 0.53 W/cm 2 . A high sele...
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| Published in | Japanese Journal of Applied Physics Vol. 20; no. 11; p. L847 |
|---|---|
| Main Authors | , , |
| Format | Journal Article |
| Language | English |
| Published |
01.01.1981
|
| Online Access | Get full text |
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| Summary: | Selective dry etching of GaAs to Al
x
Ga
1-
x
As (
x
=0.3) using an etching gas composed of CCl
2
F
2
and helium was studied. Etching was carried out at gas composition ratios of
P
CCl
2
F
2
/
P
He
above 0.25, total pressures of 0.5 to 5.0 Pa, and power densities of 0.18 to 0.53 W/cm
2
. A high selectivity ratio exceeding 200 and a clean etch profile were obtained at a gas composition ratio of
P
CCl
2
F
2
/
P
He
=1 operated at 5 Pa and 0.18 W/cm
2
. The etched profile of GaAs under the above conditions exhibited a nearly vertical-wall character. |
|---|---|
| ISSN: | 0021-4922 1347-4065 |
| DOI: | 10.1143/JJAP.20.L847 |