Structural Changes of Photoresist on Wafer Studied by Pyrolysis-GC/MS Combined with Micro-GPC

A novel method for the direct analysis of photoresist pattern was developed on the basis of Pyrolysis-GC/MS combined with micro-GPC. Firstly, a new sampling technique allowed us to collect the surface and the core of the photoresist pattern separately. Moreover, μGPC and Py-GC/MS analyses provide th...

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Bibliographic Details
Published inJournal of Photopolymer Science and Technology Vol. 27; no. 1; pp. 41 - 48
Main Authors Taguchi, Yoshihiko, Kawai, Kazuki, Otsuki, Akiko, Man, Naoki, Mochida, Kenji, Nakamura, Shinichi, Kimura, Tooru
Format Journal Article
LanguageEnglish
Published Hiratsuka The Society of Photopolymer Science and Technology(SPST) 01.01.2014
Japan Science and Technology Agency
Subjects
Ingredients
Lithography
LWR
Mathematical analysis
Patterning
Photopolymers
photoresist
Photoresists
Py-GC/MS
Resists
Sampling
μGPC
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Summary:A novel method for the direct analysis of photoresist pattern was developed on the basis of Pyrolysis-GC/MS combined with micro-GPC. Firstly, a new sampling technique allowed us to collect the surface and the core of the photoresist pattern separately. Moreover, μGPC and Py-GC/MS analyses provide the information for the distribution of resist ingredient inside resist pattern, which includes original polymer, reacted polymer, and photo acid generator through the ArF patterning process. This novel analytical method can provide remarkably helpful information about identifying proper control knobs for lithographic performance of ArF resist and for next generation lithography.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0914-9244
1349-6336
DOI:10.2494/photopolymer.27.41