A fully depleted lean-channel transistor (DELTA)-a novel vertical ultrathin SOI MOSFET

A fully depleted lean-channel transistor (DELTA) that has a gate with a vertical ultrathin SOI structure is reported. In the deep submicrometer region, selective oxidation is useful in realizing SOI isolation. It provides high crystalline quality, as good as that of conventional bulk single-crystal...

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Bibliographic Details
Published inIEEE electron device letters Vol. 11; no. 1; pp. 36 - 38
Main Authors Hisamoto, D., Kaga, T., Kawamoto, Y., Takeda, E.
Format Journal Article
LanguageEnglish
Published New York, NY IEEE 01.01.1990
Institute of Electrical and Electronics Engineers
Subjects
Applied sciences
Controllability
Crystallization
Electronics
Etching
Exact sciences and technology
Fabrication
Impedance
MOSFET circuits
Oxidation
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Substrates
Transistors
Ultra large scale integration
Design
Silicon on insulator technology
Field effect transistor
MOS transistor
Voltage current curve
Manufacturing process
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Summary:A fully depleted lean-channel transistor (DELTA) that has a gate with a vertical ultrathin SOI structure is reported. In the deep submicrometer region, selective oxidation is useful in realizing SOI isolation. It provides high crystalline quality, as good as that of conventional bulk single-crystal devices. Using experiments and three-dimensional simulation, it was shown that the gate structure has effective channel controllability and its vertical ultrathin SOI structure provides superior device characteristics.< >
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0741-3106
1558-0563
DOI:10.1109/55.46923